High energy anomaly in hole- and electron-doped cuprates

POSTER

Abstract

Recent ARPES experiments reveal the presence of a dispersion anomaly in the high $T_{c}$ cuprates. This universal anomaly appears at an energy of $\sim 300$ meV in hole-doped compounds, with a similar feature reported in the half-filled parent insulators. New experiments on Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ also reveal an anomaly, but at a higher energy scale of $\sim 500$ - $600$ meV. A key question concerns the origin of this anomaly. Quantum Monte Carlo simulations of the single-band Hubbard model reveal qualitative and quantitative agreement with the dispersion anomaly throughout the doping spectrum. They demonstrate that strong correlations play a key role in the development of the anomaly as well as that of spectral weight transfers that accompany doping.

Authors

  • B. Moritz

    • SLAC and Stanford University
  • F. Schmitt

    • Stanford University
  • W. Meevasana

    • Stanford University
  • S. Johnston

    • University of Waterloo
  • E. M. Motoyama

    • Stanford University
  • M. Greven

    • Stanford University
  • D. H. Lu

    • SLAC
  • C. Kim

    • Yonsei University
  • R. T. Scalettar

    • University of California-Davis
  • Z.-X. Shen

    • SLAC and Stanford University
  • T. P. Devereaux

    • SLAC and Stanford University