Chaotic Electronic Transport in Nanocluster Wires

Electronic circuits featuring nanoscale devices are highly topical due to their potential for exhibiting novel device functionality and fundamental solid-state physics. Circuits based on nanoclusters are particularly appealing because they ``self-assemble'' [1]. Here we develop a theoretical transport model for nanowires formed from nanoclusters. The wire width varies along the wire's length, creating an array of connected cavities. The wire walls reflect electron trajectories through material-induced chaotic scatterers within each cavity. We discuss how the chaotic properties can be engineered to increase the conductivity's sensitivity to electric and magnetic fields for use as novel sensors. [1] For example, J. G. Partridge, et al., Microelectronic Engineering 83, 1460 (2006).