Interactions of Aromatic Compounds with Graphene

ORAL

Abstract

We have used back-gated graphene field effect transistors (FETs) on Si/SiO$_{2}$ substrates to study the interactions of graphene with six-membered ring aromatic compounds C$_{6}$H$_{2n}$ ($n$ = 3-6). Electronic detection occurs through the shift of the of the source-drain resistance maximum (``Dirac peak'') with gate voltage. The size of the \textit{positive} shift of the Dirac peak is found to be linear in to the $\pi $ electron count of the molecule, suggesting the coupling between these $\pi $ electrons and those in the graphene may be responsible for the observed effects.

*NSF NIRT ECS 06-09243

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Authors

  • Hugo Romero

    • Dept. of Physics, Penn State
    • Physics Department, Pennsylvania State University
    • Physics Department, Penn State University

  • Humberto Gutierrez

    • Department of Physics, The Pennsylvania State University
    • Physics Department, Pennsylvania State University
    • Department of Physics, Pennsylvania State University
    • Physics Department, Penn State University

  • Peter Eklund

    • Physics Department, Penn State University
    • Dept. of Physics, Penn State
    • Department of Physics, The Pennsylvania State University
    • Department of Physics, Department of Materials Science and Engeering, The Pennsylvania State University
    • Department of Physics, Department of Material Science and Engineering, Pennsylvania State University, University Park, PA 16802
    • Physics Department, Material Science \& Engineering Department
    • Department of Physics, Department of Material Sciece and Engineering, Pennsylvania State University
    • Department of Physics, Department of Materials Science \& Engineering and Materials Research Institute, Penn State University
    • Physics Department,Materials Science \& Engineering Department, Pennsylvania State University