External electric field effects on AAS oscillations in narrow gap semiconductors

We present experiments on quantum interference phenomena in semiconductors with strong spin-orbit interaction, using mesoscopic parallel ring arrays fabricated on InSb/InAlSb and InAs/AlGaSb heterostructures. A front gate modulates the spin-orbit interaction, which in turn affects the oscillatory interference phenomena. The experiments investigate the low temperature resistance of the ring arrays as a function of weak perpendicularly applied magnetic fields as well as applied gate voltage. The low field magnetoresistance in the arrays has the h/2e periodicity characteristic of Altshuler-Aronov-Spivak (AAS) oscillations. Despite reduced gate action typical of narrow-gap heterostructures (characterized by Hall measurements), we note an effect on the oscillatory magnetoresistance. The AAS oscillation magnitudes acquire a quasi-periodic modulation as function of gate voltage, and the localization background broadens at higher electron densities. The nature of these influences is examined. (NSF DMR-0618235, DMR-0080054, DMR-0209371)