Piezoelectric models for semiconductor quantum dots
ORAL
Abstract
The importance of fully-coupled and semi-coupled piezoelectric models for quantum dots will be presented and compared to corresponding results for one-dimensional heterostructures. Electron energies differences of up to around 30 meV were found possible for GaN/AlN quantum dots.
*Acknowledge support from Research and Sponsored Office, Wright State University and Banff International Research Station
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