Dopants and Defects in Semiconductors IV
ORAL · W19 ·
Presentations
-
The role of nitrogen vacancies and hydrogen in conductivity of InN
ORAL
–
Authors
-
Anderson Janotti
- Materials Department, University of California, Santa Barbara, CA 93106
- University of California, Santa Barbara
-
Chris G. Van de Walle
- Materials Department, University of California, Santa Barbara, CA 93106
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara
-
-
Thermopower measurements of n- and p-type InN
ORAL
–
Authors
-
J. W. Ager III
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA
-
N. R. Miller
- Dept. of Materials Science and Engineering, University of California, Berkeley, CA
-
R. E. Jones
- Dept. of Materials Science and Engineering, University of California, Berkeley, CA
-
W. J. Schaff
- Dept. of Electrical and Computer Engineering, Cornell University, Ithaca, NY
-
W. Walukiewicz
- Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA
-
-
Site Selective CEES and Nearfield Optical Spectroscopy on Nd:GaN
ORAL
–
Authors
-
N. Jha
- Lehigh University
-
P. Capek
- Lehigh University
-
V. Dierolf
- Lehigh University
-
E. Readinger
- Army Research Laboratory
-
G. Metcalfe
- Army Research Laboratory
-
H. Shen
- Army Research Laboratory
-
M. Wraback
- Army Research Laboratory
-
-
Excitation mechanisms of rare-earth ions in GaN
ORAL
–
Authors
-
Z. Fleischman
- Lehigh University
-
S. Penn
- Lehigh University
-
L. Maurer
- Lehigh University
-
Z. Dong
- Lehigh University
-
V. Dierolf
- Lehigh University
-
-
First principles calculations for Gd doped GaN
ORAL
–
Authors
-
Chandrima Mitra
- Case Western Reserve University
-
Walter Lambrecht
- Case Western Reserve University
-
-
Inclined Dislocation Pairs in Green GaInN/GaN Light Emitting Diodes Grown on Bulk GaN Substrate
ORAL
–
Authors
-
Mingwei Zhu
- Rensselaer Polytechnic Institute
-
Theeradetch Detchprohm
- Rensselaer Polytechnic Institute
-
Shi You
- Rensselaer Polytechnic Institute
-
Yong Xia
- Rensselaer Polytechnic Institute
-
Wei Zhao
- Rensselaer Polytechnic Institute
-
Yufeng Li
- Rensselaer Polytechnic Institute
-
Jayantha Senawiratne
- Rensselaer Polytechnic Institute
-
Christian Wetzel
- Rensselaer Polytechnic Institute
-
Lianghong Liu
- Kyma Technologies, Inc.
-
Edward Preble
- Kyma Technologies, Inc.
-
Drew Hanser
- Kyma Technologies, Inc.
-
-
Electrical activation studies of Al$_{0.4}$Ga$_{0.6}$N and Al$_{0.5}$Ga$_{0.5}$N implanted with silicon for n-type doping.
ORAL
–
Authors
-
Elizabeth Moore
- Air Force Institute of Technology
-
Yung Kee Yeo
- Air Force Institute of Technology
-
Mee-Yi Ryu
- Kangwon National University
-
Robert Hengehold
- Air Force Institute of Technology
-
-
Effects of Dopants and Annealing on the Structure and Electronic properties of GaAsN
ORAL
–
Authors
-
Yu Jin
- University of Michigan
-
Matthew Reason
- University of Michigan
-
Hailing Chen
- University of Michigan
-
Cagliyan Kurdak
- Physics Department, University of Michigan
- University of Michigan
-
Rachel Goldman
- University of Michigan
-
-
Bismuth related changes in the electronic properties of high quality dilute GaAs$_{1-x}$Bi$_{x}$.
ORAL
–
Authors
-
Lekhnath Bhusal
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401
- National Renewable Energy Laboratory
-
Denis Karaiskaj
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401
-
Ryan France
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401
-
Aaron Ptak
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401
-
Angelo Mascarenhas
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401
-
Tom Tiedje
- AMPEL, Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada, V6T 1Z4
-
-
A defect relaxation model for the carbon vacancy in SiC
ORAL
–
Authors
-
Jamiyanaa Dashdorj
- Physics Department, University of Alabama at Birmingham
-
Mary Ellen Zvanut
- Physics Department, University of Alabama at Birmingham
- University of Alabama at Birmingham
-
-
Direct Imaging of Point Defect Configurations for Au Atoms Inside Si Nanowires
ORAL
–
Authors
-
K. van Benthem
- Oak Ridge National Laboratory
-
S.H. Oh
- Oak Ridge National Laboratory
-
A.Y. Borisevich
- Oak Ridge National Laboratory
-
W. Luo
- Oak Ridge National Laboratory
-
P. Werner
- MPI for Microstructure Physics
-
N.D. Zakharov
- MPI for Microstructure Physics
-
S.T. Pantelides
- Vanderbilt University
-
S.J. Pennycook
- Oak Ridge National Laboratory
-
-
Ni doping of semiconducting boron carbide
ORAL
–
Authors
-
S. Adenwalla
- Physics and Astronomy, Univ. of Nebraska-Lincoln
- Physics and Astronomy, Unv. of Nebraska-Lincoln
-
Jing Liu
- Physics and Astronomy, Univ. of Nebraska-Lincoln
- Dept. of Physics and Astronomy, University of Nebraska-Lincoln
-
Nina Hong
- Physics and Astronomy, Univ. of Nebraska-Lincoln
- Physics and Astronomy, Unv. of Nebraska-Lincoln
-
-
First principles investigations into alkali intercalation of hexagonal boron nitride
ORAL
–
Authors
-
Bahadir Altintas
- Abant Izzet Baysal University, Department of Chemistry
-
Cihan Parlak
- Abant Izzet Baysal University, Department of Physics
-
Resul Eryigit
- Abant Izzet Baysal University, Department of Physics
- Abant Izzet Baysal University
-
Cetin Bozkurt
- Abant Izzet Baysal University, Department of Chemistry
-
-
Effects of point defects on the electrical properties of aluminum antimonide: a first principles investigation
ORAL
–
Authors
-
Vincenzo Lordi
- Lawrence Livermore Lab
-
Daniel {\AA}berg
- Lawrence Livermore Lab
-
Paul Erhart
- Lawrence Livermore Lab
-