Charge accumulation in nonpolar perovskite quantum well sandwiched by polar Mott-insulating perovskites

ORAL

Abstract

We theoretically examine the possibility of having charge accumulation in the (LaTiO3)$_{n}$/Ba2VO4/(LaTiO3)$_{n}$ layered oxide quantum well system with polar barrier material and non-polar quantum well material using a LDA+U approach. The charge accumulation we find reflects electronic reconstruction which tends to occur near polar/nonpolar heterojunctions. We find enormous orbital reconstruction and both antiferromagnetic and ferromagnetic local in different planes. Lattice relaxation in the structure was allowed as a partial test of the robustness of LDA+U predictions for the properties of this system.

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Authors

  • Cheng-Ching Wang

    • University of Texas at Austin
    • Dept. of Physics, Univ. of Texas at Austin

  • Bhagawan Sahu

    • SWAN, Microelectronics Research Center
    • Microelectronics Research Center, University of Texas, Austin TX 78758

  • Hongki Min

    • University of Texas at Austin
    • Department of Physics, University of Texas, Austin, TX 78712
    • The University of Texas at Austin

  • Wei-Cheng Lee

    • Department of Physics, the University of Texas at Austin, Austin TX 78712
    • University of Texas at Austin

  • Allan MacDonald

    • University of Texas at Austin
    • University of Texas
    • Dept. of Physics, Univ. of Texas at Austin
    • Department of Physics, University of Texas, Austin, TX 78712
    • Department of Physics, The University of Texas at Austin, Austin Texas 78712
    • The University of Texas at Austin
    • Department of Physics, University of Texas at Austin