Properties of MgB$_{2}$ Thin Films Grown at Different Temperatures by Hybrid Physical-Chemical Vapor Deposition

ORAL

Abstract

MgB$_{2}$ films grown by Hybrid Physical-Chemical Vapor Deposition (HPCVD) at high temperature excel in $T_{c}$, cleanness, and crystallinity. MgB$_{2}$ films have been grown at temperatures from 350$^{^{\circ}}$C to 750$^{^{\circ}}$C by a HPCVD system with separate Mg and substrate heaters. The 100 nm MgB$_{2}$ film grown on a (001) SiC substrate at 350$^{^{\circ}}$C has a $T_{c0}$ of about 36K and a residual resistance ratio of about 1.4. X-ray diffraction and atomic force microscopy show that the film is polycrystalline. The low-temperature grown MgB$_{2}$ films are promising as the top electrode for sandwich-type all-MgB$_{2}$ junctions to preserve the integrity of the barrier layer.

*This work is supported by ONR.

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Authors

  • Menno Veldhorst

    • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Ke Chen

    • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Che-Hui Lee

    • Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA

  • Qi Li

    • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA
    • Department of Physics, Penn State University, University Park, PA, USA

  • Xiaoxing Xi

    • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania, USA
    • The Pennsylvania State University
    • Department of Materials Science and Engineering, Penn State University, University Park, PA, USA
    • Pennsylvania State University