Electric field dependent $g$ tensor modulation for a hydrogenic Si donor in bulk GaAs

ORAL

Abstract

We present calculations demonstrating the feasibility of electrical manipulation of a donor bound electron spin using $g$ tensor modulation resonance. We calculate the electron $g$ factor as a function of applied electric field, and show that $dg/dE$ is largest when the applied magnetic and electric fields are parallel. Unlike quantum dots, the donor's $g$ factor is highly nonlinear as a function of the applied magnetic field, and the anisotropy of the $g$ tensor also has a strong magnetic field dependence. The calculations are for a Si impurity in GaAs, and are done using real-space 8-band k.p theory in the envelope approximation.

*We acknowledge support of an ONR MURI, an NSF NIRT, and the University of Iowa

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Authors

  • Amrit De

    • Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa

  • Craig E. Pryor

    • Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa

  • Michael Flatte

    • Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa
    • OSTC and Department of Physics and Astronomy, University of Iowa
    • University of Iowa