Focus Session: Magnetic Tunneling
FOCUS · S32 ·
Presentations
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Bound states in electronic transport through Fe/MgO tunnel junctions
ORAL
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Authors
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Ivan Rungger
- Trinity College Dublin, Ireland
- School of Physics and CRANN, Trinity College, Dublin 2, Ireland
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Nadjib Baadji
- School of Physics and CRANN, Trinity College, Dublin 2, Ireland
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Stefano Sanvito
- School of Physics and CRANN, Trinity College Dublin
- Trinity College Dublin, Ireland
- School of Physics and CRANN, Trinity College, Dublin 2, Ireland
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Fabrication and characterization of fully epitaxial Fe/MgO/Fe magnetic tunnel junctions on Si(100) and the influence of MgO buffer layer
ORAL
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Authors
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G.X. Miao
- Francis Bitter Magnet Lab, MIT, Cambridge, MA, USA
- MIT
- Massachusetts Institute of Technology
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M. V. Veenhuizen
- MIT
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M. Munzenberg
- Universitat Gottingen
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J.S. Moodera
- Francis Bitter Magnet Lab, MIT, Cambridge, MA, USA
- MIT
- Francis Bitter Magnet Lab, MIT
- Massachusetts Institute of Technology
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Temperature and Angular Dependences of Dynamic Spin-Polarized Resonant Tunneling
ORAL
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Authors
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Casey W. Miller
- University of South Florida, Tampa FL 33620, USA
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Johan \AA kerman
- Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
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Yan Zhou
- Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
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Renu Dave
- Technology Solutions Organization, Freescale Semiconductor, Inc., Chandler AZ 85224, USA
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Jon Slaughter
- Technology Solutions Organization, Freescale Semiconductor, Inc., Chandler AZ 85224, USA
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Ivan K. Schuller
- UC San Diego, La Jolla CA 92093, USA
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Transport and spin transfer torques in Fe/MgO/Fe tunnel barriers.
COFFEE_KLATCH · Invited
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Authors
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Christian Heiliger
- CNST, NIST, Gaithersburg, MD / NanoCenter, UMD, College Park, MD
- Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Maryland NanoCenter, University of Maryland
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Tunneling Magnetoresistance in MgO based double-barrier Magnetic Tunnel Junctions
ORAL
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Authors
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Weigang Wang
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
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Chaoying Ni
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716
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Q. Wen
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H.W. Zhang
- University of Electronic Science and Technology of China, Chengdu, 610054, China
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Takahiro Moriyama
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John Xiao
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716
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Influence of spin accumulation on superconducting properties of aluminum layers in magnetic double tunnel junction devices
ORAL
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Authors
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See-Hun Yang
- IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
- IBM Almaden Research Ctr.
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Hyunsoo Yang
- IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
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Saburo Takahashi
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Sadamichi Maekawa
- Institute for Materials Research, Tohoku University
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute for Materials Research,Tohoku University
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Stuart Parkin
- IBM Almaden Research Center
- IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
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Enhanced tunneling spin polarization by amorphizing usually crystalline CoFe alloys without any glass forming additives
ORAL
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Authors
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Li Gao
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Xin Jiang
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See-Hun Yang
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Philip M. Rice
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Stuart S.P. Parkin
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Tunneling Anisotropic Magnetoresistance in Co/AlO$_{x}$/Au Tunnel Junctions
ORAL
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Authors
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Ruisheng Liu
- Halmstad University and Lund University, Sweden
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Lukasz Michalak
- Kalmar University, Sweden
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Carlo Canali
- Kalmar University, Sweden
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Lars Samuelson
- Lund University
- Lund University, Sweden
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Hakan Pettersson
- Halmstad University, Sweden
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Transport Studies of reduced RA product MTJs produced by highly charged ion irradiation
ORAL
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Authors
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Joshua Pomeroy
- National Institute of Standards and Technology
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Holger Grube
- National Institute of Standards and Technology
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Large voltage from spin pumping in magnetic tunnel junctions
ORAL
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Authors
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Zhifang Lin
- Fudan University
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Junjie Du
- University of Delaware
- Fudan University
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Nature of Voltage Dependence of Spin Torque in Magnetic Tunnel Junctions
ORAL
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Authors
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Mairbek Chshiev
- Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, AL
- MINT Center and Department of Physics, University of Alabama
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I. Theodonis
- Califronia State University, Northridge, CA
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A. Kalitsov
- Califronia State University, Northridge, CA
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N. Kioussis
- Califronia State University, Northridge, CA
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William H. Butler
- University of Alabama
- Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, AL
- MINT Center and Department of Physics, University of Alabama
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Space-Charge Induced Pauli Blockade Effect in Tunnel Junctions with Half-Metallic Electrodes
ORAL
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Authors
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A. P. Li
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T.-H. Kim
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X.-G. Zhang
- Oak Ridge National Laboratory
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J. F. Feng
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X. F. Han
- Chinese Academy of Science
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Y. Wang
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J. Zou
- The University of Queensland
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D. B. Yu
- Grirem Advanced Materials Co., Ltd.
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H. Yan
- Beijing University of Technology
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First-principles theory of nonequilibrium vertex correction:disordered magnetic tunneling junction
ORAL
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Authors
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Youqi Ke
- McGill University
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Ke Xia
- McGill University
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Hong Guo
- McGill University
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