Focus Session: Dopants and Defects in Semiconductors III
FOCUS · S19 ·
Presentations
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Stoichiometry driven impurity configurations in compound semiconductors
COFFEE_KLATCH · Invited
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Authors
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A.K. Ramdas
- Purdue University
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ABSTRACT WITHDRAWN
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Carrier compensation in semi-insulating CdTe
ORAL
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Authors
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Mao-Hua Du
- Materials Science \& Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory
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D.J. Singh
- ORNL
- Materials Science \& Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory
- Oak Ridge National Laboratory
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Gadolinium Doping in ZnTe
ORAL
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Authors
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Z.X. Ma
- Lawrence Berkeley National Lab.
- LBNL
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Lei Liu
- LBNL, UCB
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Kin Man Yu
- LBNL
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Wladek Walukiewicz
- LBNL
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Dale Perry
- LBNL
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Peter Yu
- LBNL, UCB
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Sam Mao
- LBNL, UCB
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First Principles Investigation of H in CdTe
ORAL
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Authors
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Hiroyuki Takenaka
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David J. Singh
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Mao-Hua Du
- Oak Ridge National Laboratory
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Origin of doping bottleneck in semiconductor quantum dots
ORAL
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Authors
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Su-Huai Wei
- National Renewable Energy Lab
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Jingbo Li
- Institute of Semiconductors, Chinese Academy of Sciences
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Shu-Shen Li
- Institute of Semiconductors, Chinese Academy of Sciences
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Jian-Bai Xia
- Institute of Semiconductors, Chinese Academy of Sciences
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Increased binding energy of impurities near a semiconductor vacuum interface.
ORAL
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Authors
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Paul Koenraad
- Eindhoven University of Technology
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Ineke Wijnheijmer
- Eindhoven University of Technology
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Jens Garleff
- Eindhoven University of Technology
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Karin Teichmann
- University of Gottingen
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Martin Wenderoth
- University of Gottingen
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Sebastian Loth
- University of Gottingen
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R. Ulbrich
- University of Gottingen
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First-principles simulations of GaAs defects: The challenge of Ga pseudopotentials
ORAL
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Authors
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Peter A. Schultz
- Sandia National Laboratories, Albuquerque, NM
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O. Anatole von Lilienfeld
- Sandia National Laboratories
- Sandia National Laboratories, Albuquerque, NM
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Computational studies of a 2D tight-binding model of randomly dispersed hydrogenic centers
ORAL
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Authors
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Jayson Paulose
- Department of Physics, Harvard University, Cambridge, MA 02138
- Department of Physics, Princeton University, Princeton, NJ 08544; School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
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Ravindra Bhatt
- Department of Electrical Engineering, Princeton University; Princeton Center for Theoretical Physics, Princeton, NJ 08544
- Department of Electrical Engineering and Princeton Center for Theoretical Physics, Princeton University, Princeton, NJ 08544
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Quenched singularity in the density of states of 2D random hydrogenic systems
ORAL
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Authors
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Ravindra Bhatt
- Department of Electrical Engineering, Princeton University; Princeton Center for Theoretical Physics, Princeton, NJ 08544
- Department of Electrical Engineering and Princeton Center for Theoretical Physics, Princeton University, Princeton, NJ 08544
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Erik Nielsen
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Jayson Paulose
- Department of Physics, Harvard University, Cambridge, MA 02138
- Department of Physics, Princeton University, Princeton, NJ 08544; School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
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Negative magnetocapacitance and associated Schottky barrier height changes in lightly doped GaAs
ORAL
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Authors
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Sefaattin Tongay
- University of Florida, Department of Physics
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Arthur F. Hebard
- University of Florida
- University of Florida, Department of Physics
- Department of Physics University of Florida
- University of Florida, Gainesville, FL, USA
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Thermally activated persistent photoconductivity {\&} donor binding energy in high mobility AlAs QWs
ORAL
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Authors
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S. Dasgupta
- Walter Schottky Institut, TU Munich, Germany
- Walter Schottky Institute, TU Munich, Germany
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C. Knaak
- Walter Schottky Institut, TU Munich, Germany
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A. Fontcuberta
- Tech. Univ. Muenchen
- Walter Schottky Institut, TU Munich, Germany
- Walter Schottky Institute, TU Munich, Germany
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M. Bichler
- Walter Schottky Institut, TU Munich, Germany
- Walter Schottky Institute, TU Munich, Germany
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G. Abstreiter
- Walter Schottky Institut, TU Munich, Germany
- Walter Schottky Institute, TU Munich, Germany
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M. Grayson
- Northwestern University
- Walter Schottky Institut and Dept. of Electrical Engineering and Computer Science, Northwestern University, USA
- Walter Schottky Institute,TU Munich, Germany \& Dept. of Electrical Engineering and Computer Science, Northwestern University
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The low-temperature 2D mobility for metallic p-type GaAs Quantum Well
ORAL
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Authors
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Theodore Castner
- University of Rochester
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