Rectifying Current-Voltage Characteristics of BiFeO$_{3}$/Nb-doped SrTiO$_{3}$ Heterojunction

POSTER

Abstract

Epitaxial c-axis oriented BiFeO$_{3}$ (BFO) thin films were deposited on (001) Nb-doped SrTiO$_{3}$ (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies causes the BFO thin film to evolve to a $p$-type semiconductor and form a $p-n$ heterojunction with $n$-type semiconductor Nb-STO. The current density vs voltage ($J-V)$ and capacitance vs voltage ($C-V)$ characteristics of the heterojunction were investigated. A typical rectifying$ J-V$ effect was observed with a large rectifying ratio of 5$\times $10$^{4}$. Reverse $C-V$ characteristics exhibit a linear 1/$C^{2}$ vs $V$ plot, from which a built-in potential of 0.6 V is deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

Authors

  • Hao Yang

    • Superconductivity Technology Center, Los Alamos National Laboratory
    • Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545

  • H.M. Luo

    • Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545
    • Superconductivity Technology Center, Los Alamos National Laboratory

  • H. Wang

    • Department of Electrical and Computer Engineering, Texas A\&M University
    • Dept. of Electrical and Computer Engineering, Texas A\&M University
    • Texas A\&M University

  • D.M. Feldmann

    • Superconductivity Technology Center, Los Alamos National Laboratory

  • Q.X. Jia

    • Superconductivity Technology Center, Los Alamos National Laboratory
    • Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545
    • Superconductivity Technology Center, LANL, Los Alamos, NM