Atomic-layer-deposited HfO$_{2}$ on In$_{0.53}$Ga$_{0.47}$As -- passivation and energy-band parameters

High $\kappa $ dielectric HfO$_{2}$ films were deposited by atomic layer deposition on air-exposed In$_{0.53}$Ga$_{0.47}$As/InP (100), and found to exhibit an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level un-pinning. Angular-resolved x-ray photoelectron spectroscopy (XPS) using synchrotron radiation, however, observed the existence of Ga$_{2}$O$_{3}$, In$_{2}$O$_{3}$, and In(OH)$_{3}$ at the interface. The I-V of the MOS diode for an HfO$_{2}$ 7.8 nm thick follows the Fowler-Nordheim tunneling mechanism with a low leakage $\sim $10$^{-8 }$A/cm$^{2}$ at V$_{FB}$+1V, and an interfacial density of states $D_{it}$ of 2x10$^{12 }$cm$^{-2}$eV$^{-1}$. A conduction-band offset of $\sim $ 1.8 eV, and a valence-band offset of $\sim $ 2.9 eV were derived from the transport, and XPS data, respectively. For another HfO$_{2 }$film 4.5nm thick we achieved a CET value as small as 1.0nm, and a leakage of 3.8x10$^{-4 }$A/cm$^{2}$ at V$_{FB}$+1V. The good scalability of ALD grown HfO$_{2}$ film with low leakage makes it very promising for III-V MOSFET applications.