Potential barriers in graphene

ORAL

Abstract

Graphene is a single sheet of graphite. Some of its remarkable electronic properties have been predicted over the past 6 decades, but only recently, the Geim group at Manchaster succeeded in fabricating graphene and measuring the Quantum Hall effect. These measurements agreed with earlier predictions by observing plateaus at half-integer values and triggered an immense theoretical and experimental effort. It was also predicted that the tunneling through a potential step in graphene is highly anisotropic, and occurs with probability 1 at normal incidence, due to the chiral nature of its quasiparticles. This behavior can be investigated in different potential configurations, such as pn junctions or npn barriers in graphene. In this talk, I will present our experimental work on electronic transport through a tunable potential barrier in top gated graphene devices. I will show that the experiments we have done, depend on the disorder and on the profile of the potential rise across the graphene sheet. Therefore, they can also be seen as as a tool to investigate scattering and screening properties in graphene.

*This work was supported by MARCO/FENA program and the Office of Naval Research. William R. and Sara Hart Kimball Stanford Graduate Fellowship. Stanford Nanofabrication Facility of NNIN suppported by the National Science Foundation under Grant ECS-9731293.

Authors

  • Nimrod Stander

    • Stanford University
  • David Goldhaber-Gordon

    • Stanford University
    • Deparment of Physics, Stanford University
  • Benjamin Huard

    • Stanford University
  • Joey Sulpizio

    • Stanford University
    • Deparment of Physics, Stanford University
  • Kathryn Todd

    • Stanford University
  • Bo Yang

    • Stanford University