Terahertz Absorption of (In,Ga)As Quantum Post Nanostructures

ORAL

Abstract

Quantum posts (QPs) are a new kind of self-assembled semiconductor nanostructure created by vertical stacking of self-assembled InAs quantum dots into roughly cylindrical In rich regions embedded in a GaAs matrix.$^{2}$ These structures have potential applications for THz quantum information processing,$^{1}$ THz generation, and THz detection. For a single electron trapped in a 40 nm high QP, the orbital transition between the ground and first excited state is predicted to occur near 1 THz.$^{2}$ Voltage controlled electron loading of QPs is measured by capacitance-voltage spectroscopy. Terahertz absorption spectroscopy of electrons in quantum post samples is demonstrated as a function of electron loading. $^{1}$ M. S. Sherwin, A. Imamoglu and C. Montroy, PRA 60, 3508 (1999) $^{2}$ J. He et al, Nanoletters 7, 802 (2007)

*Work supported by the NSF NIRT grant No. CCF 0507295 and the Alexander von Humboldt Foundation.

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Authors

  • C.M. Morris

    • Physics Dept. and Institute for Quantum and Complex Dynamics

  • D. Stehr

    • Physics Dept. and Institute for Quantum and Complex Dynamics

  • D.G. Allen

    • Physics Dept. and Institute for Quantum and Complex Dynamics

  • J. He

    • Dept. of Electrical and Computer Engineering, UCSB

  • H.J. Krenner

    • Dept. of Electrical and Computer Engineering, UCSB

  • C. Pryor

    • Dept. of Physics and Astronomy, University of Iowa

  • P.M. Petroff

    • Dept. of Electrical and Computer Engineering, UCSB

  • M.S. Sherwin

    • Physics Dept. and Institute for Quantum and Complex Dynamics