Integrated Plasmonic Terahertz Detector and a Gate Controlled Schottky Barrier$^{1}$

We have successfully fabricated and tested a plasmonic terahertz detector that integrates a gate controlled lateral Schottky diode$^{2}$. As demonstrated in prior work$^{3-4}$, a grating gated two dimensional electron gas can be the basis for a finely tuned terahertz detector. The addition of an independently biased gate adjacent to the drain yields striking Schottky-like behavior and offers increased sensitivity when biased to pinch off. We present measurements and models of the Schottky-like I-V characteristics, resonant plasmonic response ($\sim $50 GHz width), and bias-dependent terahertz rectification. The monolithic Schottky diode plasmonic detector points the way to a plasmonic detector with increased sensitivity. $^{1}$Supported through NSF NIRT Grant No. ECS0609146, and in collaboration with Sandia, a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. $^{2}$V. Ryzhii, et al., Jap. J. Appl. Phys. \textbf{45}, L1118 (2006). $^{3}$E.A. Shaner, et al., Appl. Phys. Lett. \textbf{90}, 181127 (2007). $^{4}$G.R. Aizin, et al., Appl. Phys. Lett. \textbf{91}, 163507 (2007).