Measurement and simulation of AlSb/InAs triple barrier resonant tunneling diodes. NanoJapan program summer 2007

Recently, Koga \textit{et al.} [1] proposed to make a spin filter out of only non-magnetic semiconductors. This spin filter consists of a triple barrier resonant tunneling structure (TB-RTS), and the Rashba spin-orbit coupling effect is utilized for matching the spin-dependent resonance levels, which would result in a high spin filtering efficiency. To test this theoretical idea, we obtained TB-RTS samples with InAs layers as quantum wells and AlSb layers as barriers from Tohoku University and studied their I-V characteristics. To understand the physics of our experimental $I-V$ curves obtained at 300, 77, and 4.2K, we also performed theoretical simulations. The authors acknowledge the growth of TB-RTS by Dr. K. Ohtani of Tohoku University. [1] T. Koga, J. Nitta, H. Takayanagi and S. Datta, Phys. Rev. Lett. \textbf{88}, 126601 (2002).