Reflectance anisotropy spectroscopy of II-VI semiconductor surfaces

The spectroscopical reflectance anisotropy (RA) response of II-VI semiconductor surfaces, which exhibits different reconstructions are studied. We use, an $ab$ $initio$ pseudopotential calculation in the framework of the density functional theory and within the local density approximation (DFT-LDA) to obtain the relaxed atomic positions, and then we use a microscopic formulation based on a semi-empirical tight binding (SETB) approach which includes spin-orbit (SO) interactions[1] to obtain the RA spectra. We show RA spectrum of each surface reconstruction and compare our theoretical results with experimental. We find a good agreement between experimental and theoretical spectra. [1] R.A. V\'azquez-Nava, B.S. Mendoza and C. Castillo, Phys. Rev. B {\bf 70}, 165306 (2004).