Study of the 2DEG in InGaAs/AlInAs heterostructures by persistent photoconductivity effect

POSTER

Abstract

The electronic properties of the two-dimensional electron gas (2DEG) in InGaAs/AlInAs heterostructures have been studied by Shubnikov-de Haas measurement at 0.3 K. After illuminating at 0.3 K, the carrier density of the sample increased from 2.3×10$^{12}$ cm$^{-2}$ to 2.5x10$^{12}$ cm$^{-2}$ and the mobility decreased slightly from 36200 cm$^{2}$/Vs to 34900 cm$^{2}$/Vs. In order to study the effect of the channel width on the 2DEG, we made the nanometer-scaled 2DEG channels were varied with different widths of 100 nm to 500 nm. The SdH measurement was performed on these wires for the magnetic field up to 12 T at 0.3 K. We observed the persistent photoconductivity effect on these wires and the electronic properties of these wires are under investigation.

Authors

  • Yu-Chi Hsu

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
    • Department of Physics, Center of Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan

  • C.H. Hsieh

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • M.H. Gau

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • Y.L. Chen

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • W.T. Chiu

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • C.C. Yang

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • J.Y. Su

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • Ikai Lo

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China

  • J.K. Tsai

    • Center for general education, National Formosa University, Yunlin, Taiwan, Republic of China

  • F.S. Chao

    • Department of computer Science and Electrical Engineering, Univ. of Maryland, Baltimore, MD20742, USA