Electronic transport in nitrogen-rich diamond
ORAL
Abstract
Electronic transport in carbon-based materials, including carbon nanotubes, graphene, and diamond, have been receiving significant attention as potential alternatives to silicon-based electronics. In particular, diamond`s excellent thermal properties provide a promising alternative in power-sensitive applications. Here we present studies of the photo-excited electronic transport in nitrogen-rich type IB diamonds. In addition to the study of the carrier dynamics within this system, we discuss a charge storage effect that may find potential application in charging-based memories.~ We find that the discharge curves follow a ``stretched-exponential'' form [1] with a fixed exponent, which does not depend on electrode spacing, voltage, and illumination intensity.~ These findings are discussed in the context of a transport mechanism in this nitrogen-rich diamond substrate. \newline \newline [1] C.G. Van de Walle Phys. Rev. B, \textbf{53}, 11292 (1996)
*This work was supported by AFOSR, FCRP, and CNID.
–