Focus Session: Dopants and Defects in Semiconductors I
FOCUS · D19 ·
Presentations
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Stability and Dynamics of Frenkel Pairs in Silicon
COFFEE_KLATCH · Invited
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Authors
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Matthew J. Beck
- Physics and Astronomy, Vanderbilt University
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Defect Formation Energies without the Band-Gap Problem: Combining DFT and \textit{GW} for the Silicon Self-Interstitial
ORAL
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Authors
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P. Rinke$^1$
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A. Janotti
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C.G. Van de Walle
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M. Scheffler
- University of California at Santa Barbara
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Density functional study of charged self-interstitials in silicon
ORAL
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Authors
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Amita Wadehra
- Ohio State University
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John W. Wilkins
- Ohio State
- The Ohio State University, Department of Physics
- The Ohio State University
- Ohio State University
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Richard G. Hennig
- Cornell University
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Large scale ab initio calculations for shallow acceptor levels in bulk Si
ORAL
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Authors
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Lin-Wang Wang
- Lawrence Berkeley National Laboratory
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Relative stability of extended interstitial defects in silicon: large-scale classical MD and first-principles DFT.
ORAL
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Authors
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Hyoungki Park
- The Ohio State University
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John W. Wilkins
- Ohio State
- The Ohio State University, Department of Physics
- The Ohio State University
- Ohio State University
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Ortho-para transition of interstitial H$_{2}$ in Si
ORAL
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Authors
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Michael Stavola
- Lehigh University
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Chao Peng
- Lehigh University
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Megan Lockwood
- Department of Physics; New Mexico State University
- Lehigh University
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Carbon Impurity Effects on Structural and Magnetic Properties of Manganese Doped Silicon
ORAL
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Authors
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Joshua LaRose
- SUNY-Albany
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Roger Pink
- SUNY-Albany
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Tara P. Das
- SUNY-Albany
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Mengbing Huang
- SUNY-Albany
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Jian-Qing Wang
- SUNY-Binghamton
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Thermal Stability and Laser Annealing of Si$_{1-y}$C$_{y}$ alloys
ORAL
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Authors
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Stefan Zollner
- Freescale Semiconductor, Inc.
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P. Grudowski
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V. Dhandapani
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G. Spencer
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A. Thean
- Freescale Semiconductor, Inc.
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Chalcogen dopants for infrared optoelectronic Si
ORAL
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Authors
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Jeffrey Warrender
- US Army Benet Laboratories
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Brion Bob
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Michael Aziz
- Harvard School of Engineering and Applied Sciences
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Supakit Charnvanichborikarn
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James Williams
- Australian National University
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Malek Tabbal
- American University of Beirut
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Atsushi Kohno
- Fukuoka University
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H-shuttling within a Hf-defect complex in Si/SiO2/HfO2 structures
ORAL
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Authors
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A.G. Marinopoulos
- Vanderbilt University, Department of Physics and Astronomy
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I. Batyrev
- Vanderbilt University, Department of Physics and Astronomy
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X. Zhou
- Vanderbilt University, Department of Physics and Astronomy
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R. Schrimpf
- Vanderbilt University, Department of Physics and Astronomy
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D. Fleetwood
- Vanderbilt University, Department of Physics and Astronomy
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S.T. Pantelides
- Vanderbilt University, Department of Physics and Astronomy
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Transition from high to low $1/f$ noise regimes in Field Oxide Field Effect Transistors (FOXFETs)
ORAL
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Authors
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Xing Zhou
- Vanderbilt University
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Daniel Fleetwood
- Department of Electrical Engineering and Computer Science, Vanderbilt University
- Vanderbilt University
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Ronald Schrimpf
- Vanderbilt University
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Laura Gonella
- CERN, PH Department
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Federico Faccio
- CERN, PH Department
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Effects of Aging and Humidity on Low-Frequency Noise of Metal-Oxide-Semiconductor (MOS) Transistors
ORAL
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Authors
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Aritra Dasgupta
- Department of Physics \& Astronomy
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S.A. Francis
- Department of Electrical Engineering and Computer Science
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Daniel Fleetwood
- Department of Electrical Engineering and Computer Science, Vanderbilt University
- Vanderbilt University
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Disorder--recrystallization effects following low-energy beam--solid interactions
ORAL
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Authors
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Matthew J. Beck
- Physics and Astronomy, Vanderbilt University
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D. M. Fleetwood
- Electrical Engineering, Vanderbilt University
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R. D. Schrimpf
- Electrical Engineering, Vanderbilt University
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S. T. Pantelides
- Physics and Astronomy, Vanderbilt University
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