Percolative Effects on Noise in Pentacene Transistors

ORAL

Abstract

Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure. http://arxiv.org/abs/0710.2700v2

*This work was supported by NIST under contract \#70NANB6H6138, by the LPS, and by the UMD NSF-MRSEC under grant DMR 05-20471. We are grateful to M. Ishigami and D. Dougherty for setting up the noise measurements and for extremely insightful discussions.

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Authors

  • Brad Conrad

    • University of Maryland - College Park

  • William Cullen

    • University of Maryland
    • University of Maryland - College Park

  • Winston Yan

    • Department of Physics \& MRSEC, University of Maryland, College Park
    • University of Maryland - College Park

  • Ellen Williams

    • Department of Physics \& MRSEC, University of Maryland, College Park
    • Dept. of Physics, University of Maryland, College Park, MD
    • Dept. of Physics, University of Mayland, College Park,MD 20742-4111 USA
    • U. of Maryland, College Park
    • University of Maryland
    • University of Maryland, College Park
    • University of Maryland - College Park
    • Department of Physics and Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742