Novel Channel Materials for CMOS Technology

Presentations

• III-V MOSFETs: From Materials {\&} Physics to Devices

  COFFEE_KLATCH · Invited

  March 10, 2008, 7:00 AM – March 10, 2008, 7:36 AM

  Authors

  • Matthias Passlack

    • Freescale Semiconductor, Inc.

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• Stability of Metal Oxide/Ge and Metal Oxide/III-V Interfaces and Implications for Low Defect Density MOS Devices

  COFFEE_KLATCH · Invited

  March 10, 2008, 7:36 AM – March 10, 2008, 8:12 AM

  Authors

  • Paul McIntyre

    • Stanford University

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• Dangling-bond defects and hydrogen passivation in germanium

  COFFEE_KLATCH · Invited

  March 10, 2008, 8:12 AM – March 10, 2008, 8:48 AM

  Authors

  • Justin R. Weber

    • Department of Physics, University of California, Santa Barbara, California 93106-9530, USA

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• Scanning-tunneling microscopy and spectroscopy of oxide deposition on III-V semiconductor surfaces

  COFFEE_KLATCH · Invited

  March 10, 2008, 8:48 AM – March 10, 2008, 9:24 AM

  Authors

  • Andrew Kummel

    • UCSD

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• Monte Carlo simulations of carrier flow in novel gate materials

  COFFEE_KLATCH · Invited

  March 10, 2008, 9:24 AM – March 10, 2008, 10:00 AM

  Authors

  • Massimo (Max) Fischetti

    • University of Massachusetts

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