Structure competition in growth of In island on Si{111} from first-principles calculations

ORAL

Abstract

We have carried out first principles calculations to understand the growth of indium island on Si{111} substrate which have been observed to have an interesting FCC and BCT structure competition. Our calculations show that quantum size effect (QSE) plays an important role in different island structure formation. Furthermore, the interface energy between In and Si substrate also controls the relative stabilily of different island structures.

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Authors

  • Cai-Zhuang Wang

    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA

  • Min Ji

    • Ames Laboratory, US DOE, Ames, IA 50011, USA
    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA

  • J. Chen

    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA

  • M. Hupalo

    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA

  • M.C. Tringides

    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA

  • K.M. Ho

    • Ames Laboratory US-DOE and Department of Physics, Iowa State University, Ames, IA 50011, USA