Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

ORAL

Abstract

A detailed lineshape analysis of the temperature dependent photoluminescence spectra of In$_{0.4}$Ga$_{0.6}$As$_{1-y}$N$_{y}$/GaAs quantum well (QW) (y=0; 0.005) is carried out. The analysis extracts the binding energy of the e$_{1}$-hh$_{1}$ ground-state exciton which equals 9.72$\pm $1.24 meV and 17.5$\pm $0.9 meV for InGaAs and InGaAsN (N=0.5{\%}) single QW sample, respectively. By using a fractional dimension exciton binding energy model, an electron effective mass of m$_{e}$*=(0.11$\pm $0.015)m$_{0 }$ is determined for the highly strained dilute nitride single QW.

*Work supported by the National Science Foundation under grant ECS 03134410.

–

Authors

  • Lifang Xu

    • Department of Electrical and Computer Engineering,Colorado State University, Fort Collins, CO 80523-1373

  • Dinesh Patel

    • Department of Electrical and Computer Engineering,Colorado State University, Fort Collins, CO 80523-1373

  • Carmen Menoni

    • Department of Electrical and Computer Engineering,Colorado State University, Fort Collins, CO 80523-1373

  • Jengya Yeh

    • Reed Center for Photonics, Department of Electrical \& Computer Engineering,University of Wisconsin-Madison, Madison, WI 53706

  • Luke Mawst

    • Reed Center for Photonics, Department of Electrical \& Computer Engineering,University of Wisconsin-Madison, Madison, WI 53706

  • Nelson Tansu

    • Center for Optical Technologies, Department of Electrical and Computer Engineering,Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA