Imaging Few-Electron Double Quantum Dots in InAs/InP Nanowires

ORAL

Abstract

InAs quantum dots formed in InAs/InP nanowire heterostructures are attractive candidates for nanoelectronics, spintronics and quantum information processing.~Tunnel-coupled double InAs dots defined by InP barriers can be grown using chemical beam epitaxy; each dot can be small enough to hold just a few electrons. It is difficult to lithographically define gates small enough to individually address each dot. With use of a liquid-He cooled scanning probe microscope (SPM), the Coulomb blockade conductance of a single InAs quantum dot in an InAs/InP nanowire has been imaged, using the SPM tip as a movable gate [1]. This approach can individually tune the charge on each InAs dot in an InAs/InP nanowire. We plan to use this technique to investigate tunnel-coupled InAs double dots. \newline [1] A. Bleszynski et al., 28th Int. Conf. on the Physics of Semiconductors, 2006.

*Supported at Harvard by the ARO (W911NF-04-0343) and our NSEC (NSF PHY-01-17795)

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Authors

  • Halvar J. Trodahl

    • Dept of Physics, Harvard Univ

  • Erin E. Boyd

    • Dept of Physics, Harvard Univ

  • Ania Bleszynski

    • Dept of Physics, Yale Univ
    • Department of Physics, Yale University
    • Department of Physics, Yale University, New Haven, CT

  • Robert M. Westervelt

    • Dept of Physics and Div of Engineering \& Applied Sciences, Harvard Univ
    • Dept of Physics and Div of Eng and App Sci, Harvard Univ
    • Harvard University
    • Mallinckrodt Professor of Applied Physics and of Physics
    • Department of Physics, Harvard University, Cambridge, MA
    • Harvard DEAS
    • Department of Physics

  • Linus Fr\"oberg

    • Dept of Solid State Physics, Lund Univ
    • Lund University

  • L. Samuelson

    • Dept of Solid State Physics, Lund Univ
    • Lund University, Solid State Physics / the Nanometer Structure Consortium, Box 118, S-221 00 Lund, Sweden
    • Lund University
    • Solid State Physics, Lund University, Sweden