Nondestructive Memory Elements Based on Polymeric Langmuir-Blodgett Thin Films

ORAL

Abstract

Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of their low power consumption and fast nondestructive readout. Among the ferroelectric thin films used in FET devices; the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C$_{2}$H$_{2}$F$_{2})$, with trifluoroethylene, TrFE (C$_{2}$HF$_{3})$, has distinct advantages, including low dielectric constant, low processing temperature, low cost and compatibility with organic semiconductors. By employing the Langmuir-Blodgett technique, we are able to deposit films as thin as 1.8 nm. We discuss the characterization, modeling and fabrication of metal-ferroelectric-insulator-semiconductor (MFIS) structures incorporating these films.

*This work is supported by the National Science Foundation.

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Authors

  • T.J. Reece

    • Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska at Lincoln

  • Stephen Ducharme

    • Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska at Lincoln
    • Physics and Astronomy at University of Nebraska-Lincoln
    • Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588-0111
    • Dept. of Physics \& Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
    • Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, USA