Scanning tunneling microscopy of graphene field effect transistors

ORAL

Abstract

We have investigated the electronic properties of graphene field effect transistors at atomic scale using scanning tunneling microscopy. We find that photoresist, required by conventional electron beam lithography, binds to graphene and leaves residues with thickness of approximately 1 nm. We will present the procedure necessary to eliminate this residue and report our results of scanning tunneling microscopy and spectroscopy performed on graphene.

*This work is partially supported by the DCI postdoctoral fellowship and the Laboratory for Physical Sciences at Unversity of Maryland.

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Authors

  • Masa Ishigami

    • Physics Department and the Material Research Science and Engineering Center, Unversity of Maryland, College Park, MD 20742

  • Jianhao Chen

    • Laboratory for Physical Sciences and Department of Physics, University of Maryland, College Park, Maryland 20742
    • Physics Department and the Material Research Science and Engineering Center, Unversity of Maryland, College Park, MD 20742
    • Physics Department and the Material Research Science and Engineering Center, University of Maryland, College Park, MD 20742

  • Ellen D. Williams

    • Physics Department and the Material Research Science and Engineering Center, Unversity of Maryland, College Park, MD 20742
    • Physics \& MRSEC UMD
    • U. of Maryland, College Park
    • Physics Department and the Material Research Science and Engineering Center, University of Maryland, College Park, MD 20742
    • University of Maryland
    • Physics Department and Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742