Influence of Correlated Hybridization on the Conductance of Molecular Transistors
ORAL
Abstract
We study the spin-1/2 single-channel Anderson impurity model with correlated (occupancy dependent) hybridization for molecular transistors using the numerical renormalization-group method. Correlated hybridization can induce nonuniversal deviations in the normalized zero-bias conductance and, for some parameters, modestly enhance the spin polarization of currents in applied magnetic field. Correlated hybridization can also explain a gate-voltage dependence to the Kondo scale similar to what has been observed in recent experiments.
*This work was supported by the NSF International Institute for Complex Adaptive Matter (NSF Grant No. DMR-0645461), the U.S. Department of Energy office of Basic Energy Sciences, Division of Materials Research, and the NIC, Forschungszentrum J\"ulich.
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