Magnetoelectric thin films for electrically controlled exchange bias in spintronic applications

Epitaxial (111) oriented thin films of magnetoelectric (ME) Cr2O3 are grown by MBE. These films are the key component of Cr2O3(111)/(Co/Pt)3 heterostructures allowing for electrically controlled exchange bias (EB) and novel spintronic applications [1]. Pure voltage control of magnetic configurations in TMR-type devices is proposed as an alternative to current-induced switching. Basic effects of electrically controlled EB and its ME switching are studied by magnetometry and polar Kerr rotation. Exchange coupling between the ME antiferromagnet Cr2O3 and the ferromagnetic CoPt multilayer gives rise to perpendicular EB. The latter is controlled by axial electric fields inducing excess magnetization at the interface which controlls the EB field. Recently, the sign of the EB field has been tuned via a field cooling procedure where a Cr2O3(111) bulk/(Co/Pt)3 system is exposed to either parallel or antiparallel axial magnetic and electric fields [2]. Here we study this ME switching effect in an all thin film heterostructure. [1] Ch.Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [2] P.Borisov et al., Phys. Rev. Lett. 94, 117203 (2005).