Magnetic field dependence of a resonant tunneling diode based in the GaMnAs/AlGaAs material system.

ORAL

Abstract

A resonant tunneling diode was fabricated with magnetic GaMnAs emitter and quantum well regions and a nonmagnetic p-GaAs collector.~ At 4K, below the Curie temperature for GaMnAs, negative differential resistance (NDR) associated with resonant tunneling of holes was observed.~ Both the magnitude of NDR as well as its associated bias were found to be dependent on magnetic field.~ If the device bias is held constant and the magnetic field is swept, our device exhibits either positive or negative tunneling magetoresistance (TMR) up to several tens of percent, depending on the device bias.

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Authors

  • Edward Likovich

    • Harvard University

  • Kasey Russell

    • Harvard University

  • Wei Yi

    • Harvard University

  • Venkatesh Narayanamurti

    • Gordon McKay Laboratory of Applied Science, Harvard University
    • Harvard University

  • Keh-Chiang Ku

    • Penn State University

  • N. Samarth

    • Dept. of Physics, Penn State University, University Park PA 16802
    • Penn State University
    • Dept. of Physics, The Pennsylvania State University