Ge-Based Diluted Magnetic Semiconductor films on Si

ORAL

Abstract

Ge-based diluted magnetic semiconductor (DMS) films with 4{\%} manganese (Mn) are grown on Si (001) substrates using molecular beam epitaxy (MBE). Surface morphology is measured by atomic force microscopy (AFM). For a 24-nm thick film, surface roughness around is around 1nm. Structure properties of the film are characterized by X-ray diffraction (XRD) and single crystal film quality by the results which only (004) Ge peak is observed. Magnetic properties are measured by a superconducting quantum interference device (SQUID). Clear hysteresis is observed at room-temperature. The results indicate that high quality Ge-based DMS can be grown on Si with good crystal quality and magnetic properties.

*MACRO Focus Center on Functional Engineered Nano Architectonics, Western Institution of Nanoelectronics

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Authors

  • Zuoming Zhao

    • University of California, Los Angeles

  • Xiaoyu Zhou

    • University of California, Los Angeles

  • Kang L. Wang

    • Device Research Laboratary, Department of Electrical Engineering, University of California, Los Angeles
    • Electrical Engineering Department, University of California, Los Angeles
    • EE Dept., UCLA
    • University of California, Los Angeles