Charge sensing in Si/SiGe quantum dots using single electron transistors

Silicon-based solid-state qubit schemes have obvious economic appeal as well as compelling physical motivations, such as a long spin-spin dephasing time. Proposed silicon qubit schemes include quantum dots coupled to fast readout devices, such as quantum point contacts or single electron transistors (SETs). Recently, Si/SiGe quantum dots defined by Schottky gates deposited on a Si/SiGe heterostructure containing a high mobility two-dimensional electron gas have been characterized. Here we report the integration of a SET with such a Si/SiGe quantum dot. Recent measurements, including transport and sensing of the dot charge with the SET, will be discussed. [1] Slinker, K. A. et al. New J. Phys. 7 246 (2005) [2] Klein, L. J. et al. J. Appl. Phys. 99, 23509 (2006) [3] Sakr, M. R. et al. Appl. Phys. Lett. 87, 223104 (2005) [4] Berer, T. et al. Appl. Phys. Lett. 88, 162112 (2006)