Three Level Systems for Quantum Memories in Erbium Doped Materials

Quantum memories for single photons could play an important role in quantum communication and optical quantum computing. We are working towards the realization of such a quantum memory based on the controlled reversible inhomogeneous broadening (CRIB) of a single absorption line in a rare earth ion. The implementation of the CRIB protocol for such a quantum memory requires a three level system such that the absorption over a broad bandwidth in a material can be greatly reduced via optical pumping to the auxiliary level. We report on the first experimental steps towards the realization of such a three level systems in Erbium doped materials with spectral hole burning techniques.