Conclusive Evidence for Impurity Band Conduction in Metallic Ga$_{1-x}$Mn$_{x}$As
ORAL
Abstract
The electronic structure and carrier dynamics of the dilute magnetic semiconductor Ga$_{1-x}$Mn$_{x}$As are studied via optical spectroscopy. We focus on the changes induced by annealing the samples, which is known to result in a large increase in the critical temperature. This study provides conclusive evidence that the Fermi energy ($E_{F}$) lies in a metallic impurity band.
–
Authors
K.S. Burch
Los Alamos National Laboratory
MST-CINT, Los Alamos National Laboratory
MPA-CINT, Los Alamos National Laboratory
D.B. Shrekenhamer
Department of Physics, University of California, San Diego
E.J. Singley
Department of Physics, California State University, East Bay
J. Stephens
Center for Spintronics and Quantum Computation, University of California, Santa Barbara
B.L. Sheu
Department of Physics and Materials Research Institute, The Pennsylvania State University
R.K. Kawakami
Department of Physics, University of California, Riverside
D.D. Awschalom
Center for Spintronics and Quantum Computation, University of California, Santa Barbara
N. Samarth
Department of Physics and Materials Research Institute, The Pennsylvania State University
P. Schiffer
Department of Physics and Materials Research Institute, The Pennsylvania State University
D.N. Basov
Department of Physics, University of California, San Diego