Resistance Memory Switching behavior in MnOx, FeOx, CoOx, and NiOx thin films.

We have fabricated the ReRAM(Resistance change Random Access Memory) with some ferromagnetic transition metal(Co, Fe, Mn) oxides materials. Antiferromagnetic NiOx film is well known to show non-volatile resistance switching property. Here, we have studied the relationship between magnetic property and resistance switching properties. We have deposited the MnOx, FeOx, CoOx, and NiOx thin films on Pt/Ti/SiO$_{2}$/Si (111) by using Pulsed Laser Deposition (PLD), and then analyzed the structural properties of these oxides thin films by using X-Ray diffraction (XRD) and Scanning Electron Microscope (SEM), surface properties using Atomic Force Microscope (AFM), and electrical properties using probe station. Every thin film shows poly-crystalline behaviors and reproducible resistance switching behaviors. We have performed the temperature-dependent electrical property measurement across the Neel temperature.