Organic Photovoltaic Devices with Ga-doped ZnO$_{2}$ electrode

POSTER

Abstract

We report two organic photovoltaic devices using a Ga-doped ZnO$_{2}$ (GZO) film as a transparent conducting electrode. In the first structure, the conventional In$_{2}$O$_{3}$:Sn (ITO) hole-collecting anode was replaced by GZO and an efficiency of 0.35 {\%} was obtained. The second has the inverse structure where GZO was used as the electron-collecting cathode and gave a nonoptimized device efficiency of about 1.4 {\%}. Furthermore, this inverse structure of GZO devices provides a passivation layer to protect the active layer from the atmosphere.

Authors

  • M. S. Son

    • Department of Physics

  • J. Owen

    • Department of Nano-Science and Technology Graduate Program

  • Kyung-Hwa Yoo

    • Department of Physics
    • Dept. of Physics and National Core Research Center for Nanomedical Technology, Yonsei Univ.
    • Department of Physics, Yonsei University
    • Dept. of Physics and National Core Research Center for Nanomedical Technologyl, Yonsei University
    • Dept. of Physic
    • Dept. of Physics and National Core Research Center for Nanomedical Technology, Yonsei University

  • B. D. Ahn

    • Department of Electronic and Electrical Engineering

  • S. Y. Lee

    • Department of Electronic and Electrical Engineering