Carrier transport in 2D graphene layers near the Dirac point

ORAL

Abstract

In a recent work we studied carrier transport in gated 2D graphene monolayers theoretically in the presence of scattering by random charged impurity centers using a Boltzmann theory formalism (cond-mat/0610157). Comparing our results with available experimental data suggested that the low density saturation of conductivity arises from charged impurity induced inhomogeneity in the graphene carrier density. In the present work, we develop a model for carrier transport in a disorder-induced inhomogeneous potential and examine the consequences on conductivity. This work was partially supported by U.S. ONR.

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Authors

  • Shaffique Adam

  • Euyheon Hwang

    • University of Maryland

  • Sankar Das Sarma

    • Condensed Matter Theory Center, Physics Department, University of Maryland
    • Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
    • Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, MD 20742
    • University of Maryland
    • Condensed Matter Theory Center, University of Maryland, College Park, MD 20742-4111, USA
    • University of Maryland, College Park
    • CMTC, Department of Physics, University of Maryland, College Park, MD 20742
    • CMTC, Department of Physics, UMD, Maryland
    • Condensed Matter Theory Center, University of Maryland