Electron Transport in SiGe single-electron transistors

ORAL

Abstract

It is expected that electron spins in two dimensional electron gasses (2DEGs) in SiGe heterostructures will have longer spin coherence times than GaAs 2DEGs. We have fabricated quantum point contacts and single electron transistors in this material system using palladium Schottky gates. We find that these gates can deplete the 2DEG with negligible leakage if the area of the gates is minimized, as shown by previous workers.$^{1}$ 1 K.A. Slinker et. al., New Journal of Physics 7 246 (2005)

*This work was supported under the following grants: Army Research Office: W911NF-05-1-0062 NSF: DMR-0353209 NSEC Program of the NSF: PHY-0117795

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Authors

  • Ian Gelfand

    • Harvard University

  • Jian Liu

    • University of California, Los Angeles

  • Ya-Hong Xie

    • University of California, Los Angeles

  • Marc Kastner

    • Massachusetts Institute of Technology