Electronic Structure and Carrier Mobility in Strain-Engineered Nanostructures

ORAL

Abstract

Strain engineering is a major driving force to continue the performance scaling of silicon devices. However, currently strain engineering is confined in planar hetero-structures. It is anticipated that future generation of devices may employ nanostructures and new quantum principles. Here, we present theoretical studies of strain engineered nanostructures for potential device applications. Combining first-principles and finite element calculations, we analyze the electronic band structure and carrier mobility in SiGe nanotubes and Si nanomembranes that are strain-modulated by Ge quantum dots.

*The authors acknowledge the financial support from DOE.

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Authors

  • Decai Yu

    • University of Utah

  • Yu Zhang

    • University of Utah

  • Ji Zang

    • Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112
    • University of Utah

  • Feng Liu

    • Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112
    • University of Utah
    • Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 USA
    • Department of Materials Science and Engineering, Univeristy of Utah, Salt Lake City, UT 84112
    • Department of Material Science and Engineering, University of Utah, Salt Lake City, UT 84112-0610, USA
    • Department of Material Science and Engineering, University of Utah, Salt Lake City, UT 84112