Self-assembled (In,Ga)As Quantum Posts on GaAs.

ORAL

Abstract

We demonstrate a method for the MBE growth of height controlled (In,Ga)As quantum posts (QPs). Its main axis is along the growth direction. they are dislocation free and have a dimensions $\approx $ 20nm and 40nm. From EDX measurements, The Ga$_{.55}$In$_{.45}$As QPs are embedded laterally in a Ga$_{.9}$In$_{.1}$As layer. We have computed the electron and hole levels using an 8 bands, stain dependent, \underline {k.p} effective mass model. Comparison of calculated single particle electron and hole levels with the observed micro-PL spectra single QPs indicates that electrons are spread over the entire QP whereas holes are localized near the seed QD. * This research is sponsored through an NSF-NIRT grant No. CCF 0507295. HJK acknowledges support by the Alexander von Humboldt Foundation.

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Authors

  • Jun He

    • University of California, Santa Barbara(UCSB), Department of Materials, Santa Barbara, CA 93106 USA

  • Hubert Krenner

    • UCSB, Department of Materials, Santa Barbara, CA 93106 USA

  • Craig Pryor

    • University of Iowa, Department of Physics and Astronomy, Iowa City, IA 52242 USA

  • Jingpin Zhang

    • UCSB, Department of Materials, Santa Barbara, CA 93106 USA

  • Yuan Wu

    • UCSB, Department of Materials, Santa Barbara, CA 93106 USA

  • Dan Allen

    • UCSB, Department of Physics, Santa Barbara, CA 93106 USA

  • Chris Morris

    • UCSB, Department of Physics, Santa Barbara, CA 93106 USA

  • Mark Sherwin

    • UCSB, Department of Physics, Santa Barbara, CA 93106 USA

  • Pierre Petroff

    • UCSB, Department of Materials, Santa Barbara, CA 93106 USA