High Current All-Semiconductor Carbon Nanotube Electronics

ORAL

Abstract

Existence of both metallic and semiconducting carbon nanotubes in as-grown materials has hindered the development of nanotube electronics. A gas-phase plasma hydrocarbonation reaction is shown here to selectively etch and gasify metallic nanotubes, retain semiconducting nanotubes in near-pristine forms without covalent modification, and narrow down diameter distribution of the semiconductors. 100{\%} of purely semiconducting nanotubes are obtained and connected in parallel for high-current transistors without shorts by metallic species. The `dry' chemical approach is scalable and compatible with existing semiconductor processing technology for future integrated circuits.

*We thank Intel and MARCO MSD for support.

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Authors

  • Guangyu Zhang

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Pengfei Qi

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Xinran Wang

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Yuerui Lu

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Xiaolin Li

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Ryan Tu

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Sarunya Bangsaruntip

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • David Mann

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Li Zhang

    • Department of Chemistry, Stanford University, Stanford, CA 94305

  • Hongjie Dai

    • Department of Chemistry, Stanford University, Stanford, CA 94305