We discuss the possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface[1]. In particular, we investigate the feasibility of shuttling donor-bound electrons between the double donor impurity in the bulk and the Si/SiO$_2$ interface by tuning an external electric field. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. We also investigate operations with double donors in their first excited state: In this case ionization fields are smaller and tunneling times are faster, as required in spin-to-charge conversion measurements. This work is supported by LPS and NSA. \newline \newline [1] M.J. Calderon, B. Koiller, and S. Das Sarma, cond- mat/0610089.
–
Authors
Maria Calderon
Condensed Matter Theory Center, University of Maryland
Ins. Ciencia de Materiales de Madrid (CSIC) and Condensed Matter Theory Center (University of Maryland)
Belita Koiller
Instituto de Fisica, UFRJ, Rio de Janeiro, Brazil
Instituto de Fisica, Universidade Federal do Rio de Janeiro, Brazil
Sankar Das Sarma
Condensed Matter Theory Center, Physics Department, University of Maryland
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, MD 20742
University of Maryland
Condensed Matter Theory Center, University of Maryland, College Park, MD 20742-4111, USA
University of Maryland, College Park
CMTC, Department of Physics, University of Maryland, College Park, MD 20742
CMTC, Department of Physics, UMD, Maryland
Condensed Matter Theory Center, University of Maryland
