Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

ORAL

Abstract

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.

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Authors

  • Gavin Scott

    • UCLA Dept of Physics

  • Ming Xiao

    • UCLA Dept of Physics

  • Ed Croke

    • HRL Laboratories

  • Eli Yablonovitch

    • UCLA Dept of Electrical Engineering

  • HongWen Jiang

    • Department of Physics and Astronomy, University of California at Los Angeles
    • UCLA Dept of Physics