Tunneling evidence for weak localization in layered manganites

ORAL

Abstract

Our point contact tunneling experiments on La$_{1.28}$Sr$_{1.72}$Mn$_{2}$O$_{7}$ (bi-layered LSMO x=0.36) at low temperatures reveals a $\surd $V low bias anomaly in the tunneling conductance. This anomally qualitatively matches the $\surd $E predictions of the weak localization effect on the electronic DOS. The data could provide an important corroboration of the weak localization hypothesis, which was concluded previously from low-temperature conductivity and magnetoresistance data.

*Contributed by UofC under U.S. DoE contract no. W-31-109-ENG-38.

Authors

  • Daniel Mazur

    • Illinois Institute of Technology
  • K. Gray

    • Argonne National Laboratory
  • John F. Zasadzinski

    • Illinois Institute of Technology
  • Hong Zheng

    • Materials Science Division, Argonne National Laboratory
  • John Mitchell

    • Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
    • Argonne National Laboratory
    • Material Science Division, Argonne National Laboratory
    • Materials Science Division, Argonne National LAboratory, USA
    • Materials Science Division, Argonne National Laboratory