All-Epitaxial Microcavity for Cavity-QED with Quantum Dots

ORAL

Abstract

We report on the optical characterization of a novel type of optical microcavity that forms a fully-buried semiconductor heterostructure and offers numerous technological advantages such as chemical/mechanical stability, good thermal heat-sinking, and compatibility with electrical injection. Based on epitaxial re-growth over a lithographically-defined, quantum dot-containing mesa, this approach leads to self-alignment of single dots with the field anti-node while simultaneously providing quality factors exceeding 10,000 that support lasing with only a single quantum dot layer. Time-resolved measurements reveal the most basic cavity-QED effect in this structure, namely the Purcell spontaneous emission enhancement. A strong spectral and spatial dependence of this effect is observed using photoluminescence imaging, highlighting in particular the importance of the spatial overlap.

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Authors

  • A. Muller

    • University of Texas at Austin, Dept. of Physics
    • University of Texas at Austin

  • Dingyuan Lu

  • Jaemin Ahn

  • Deepa Gazula

  • Sonia Quadery

  • Sabine Freisem

  • Dennis Deppe

    • University of Texas at Austin, Dept. of Electrical and Computer Engineering

  • Chih-Kang Shih

    • University of Texas at Austin, Dept. of Physics
    • Department of Physics, the University of Texas at Austin
    • UT at Austin Dept. of Physics
    • The University of Texas at Austin
    • Department of Physics, the University of Texas at Austin, Austin TX 78712
    • Physics Department, University of Texas
    • The Univ. of Texas at Austin, Dept. of Physics