Compound Semiconductor Defects and Dopants

Presentations

• Silicon-interstitials-based Benchmarking of DFT Exchange-correlation Potentials

  ORAL

  March 16, 2006, 2:30 PM – March 16, 2006, 2:42 PM

  Authors

  • W. D. Parker

  • R. G. Hennig

  • J. W. Wilkins

    • Ohio State U.

  • C. J. Umrigar

    • Cornell U.

  • R. Martin

  • E. Batista

  • K. P. Driver

  • B. Uberuaga

    • LANL

  • J. Heyd

  • G. Scuseria

    • Rice U.

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• Random doping and oxide roughness induced fluctuations in nanoscale semiconductor devices

  ORAL

  March 16, 2006, 2:42 PM – March 16, 2006, 2:54 PM

  Authors

  • Petru Andrei

    • Florida State University

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• Thermodynamics of semiconductor doping and stoichiometry from first-principles methods

  ORAL

  March 16, 2006, 2:54 PM – March 16, 2006, 3:06 PM

  Authors

  • Stephan Lany

  • Alex Zunger

    • National Renewable Energy Laboratory, Golden, CO 80401

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• Stoichiometry Driven Impurity Configurations in Compound Semiconductors

  ORAL

  March 16, 2006, 3:06 PM – March 16, 2006, 3:18 PM

  Authors

  • S. Rodriguez

  • G. Chen

  • I. Miotkowski

  • A. K. Ramdas

    • Purdue University

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• \textit{Ab initio }studies of defects in CdTe and HgTe with symmetrized basis

  ORAL

  March 16, 2006, 3:18 PM – March 16, 2006, 3:30 PM

  Authors

  • Yia-Chung Chang

  • Hyejung Kim

    • University of Illinois at Urbana-Champaign

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• Dislocation filtering by buffer layer interfaces in InSb/Al$_{x}$In$_{1-x}$Sb heterostructures grown on GaAs (001) substrates

  ORAL

  March 16, 2006, 3:30 PM – March 16, 2006, 3:42 PM

  Authors

  • Madhavie EdirIsooriya

  • Tetsuya Mishima

    • University of Oklahoma

  • M. B. Santos

    • University of Oklahoma
    • Department of Physics and Astronomy, University of Oklahoma

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• Thermodynamic model for the structure of the 90 degree partial dislocation in diamond cubic semiconductors.

  ORAL

  March 16, 2006, 3:42 PM – March 16, 2006, 3:54 PM

  Authors

  • S. P. Beckman

    • The University of Texas at Austin

  • Daryl Chrzan

    • The University of California at Berkeley

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• Strain relaxation and crystal quality in compositionally graded GaAsSb/GaAs metamorphic buffer layers

  ORAL

  March 16, 2006, 3:54 PM – March 16, 2006, 4:06 PM

  Authors

  • Benny Perez Rodriguez

  • Joanna Mirecki Millunchick

    • University of Michigan

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• Mutual Passivation of Donors and Isovalent Nitrogen in GaAs

  ORAL

  March 16, 2006, 4:06 PM – March 16, 2006, 4:18 PM

  Authors

  • Jingbo Li

  • Pierre Carrier

  • Su-Huai Wei

    • National Renewable Energy Laboratory

  • Shu-Shen Li

  • Jian-Bai Xia

    • State Key Lab for Superlattices and Microstructures, Institute of Semiconductors, CAS

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• Effect of indium on the localized vibrational mode of nitrogen in GaN$_x$As$_{1-x}$

  ORAL

  March 16, 2006, 4:18 PM – March 16, 2006, 4:30 PM

  Authors

  • A. M. Teweldeberhan

    • Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland

  • Stephen Fahy

    • Department of Physics, University College Cork, Ireland
    • Tyndall National Institute, University College Cork
    • Tyndall National Institute and Dept. of Physics University College Cork, Ireland
    • Department of Physics and Tyndall National Institute, University College, Cork, Ireland

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• Effects of edge and screw dislocations on optical properties of Wurtzite GaN

  ORAL

  March 16, 2006, 4:30 PM – March 16, 2006, 4:42 PM

  Authors

  • Jeong Ho You

  • Harley Johnson

    • University of Illinois at Urbana-Champaign

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• Vacancy induced localized states in graphene

  ORAL

  March 16, 2006, 4:42 PM – March 16, 2006, 4:54 PM

  Authors

  • J.M.B. Lopes dos Santos

    • CFP and Departamento de F\'{i}sica, Faculdade de Ci\^{e}ncias Universidade do Porto
    • CFP and Departamento de F{\'\i}sica, Faculdade de Ci{\^e}ncias Universidade do Porto, 4169-007 Porto, Portugal

  • Vitor M. Pereira

    • CFP and Departamento de F{\'\i}sica, Faculdade de Ci\^encias , Universidade de Porto

  • Francisco Guinea

    • Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain
    • Inst de Ciencia de Materiales de Madrid (CSIC) Cantoblanco 28049 MADRID
    • Instituto de Ciencia de Materiales de Madrid, Spain

  • Nuno M.R. Peres

    • Center of Physics and Departamento de F{\'\i}sica, Universidade do Minho, P-4710-057, Braga, Portugal
    • Universidade do Minho. Portugal

  • Antonio H. Casto Neto

    • Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, MA 02215, USA
    • Boston University
    • Department of Physics, Boston University
    • Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA

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• Low temperature photoluminescence in the strongly disordered dilute nitride GaAsN.

  ORAL

  March 16, 2006, 4:54 PM – March 16, 2006, 5:06 PM

  Authors

  • Ivana Bosa

  • Dermot McPeake

    • Tyndall National Institute, University College Cork, Ireland

  • Stephen Fahy

    • Tyndall National Institute and Department of Physics, University College Cork, Ireland
    • Department of Physics and Tyndall National Institute, University College, Cork, Ireland

  View abstract →