Temperature and Carrier-Density Dependence of 1/f Noise in Single-walled Carbon Nanotube Transistors

David Tobias; Masa Ishigami; C.J. Lobb; Michael S. Fuhrer

Temperature and Carrier-Density Dependence of 1/f Noise in Single-walled Carbon Nanotube Transistors

ORAL

Abstract

Field-effect transistors (FETs) have been fabricated from individual semiconducting single-walled carbon nanotubes (SWNTs) grown by chemical vapor deposition on SiO$_{2}$/Si substrates and contacted by metal (Cr/Au) electrodes. We have measured the low-frequency anomalous noise (1/f noise) in such SWNT-FETs as a function of temperature and charge carrier density. This material is based upon work supported by the National Science Foundation under Grant No. 0102950 and the Center for Superconductivity Research.

March 16, 2006, 2:42 PM – March 16, 2006, 2:54 PM

Authors

David Tobias
Masa Ishigami
C.J. Lobb
Michael S. Fuhrer
- Center for Superconductivity Research, Department of Physics, University of Maryland College Park, College Park, MD 20742