Surface Gated Quantum Hall Effect in InAs Heterostructures

ORAL

Abstract

We demonstrate low leakage surface gating of Indium Arsenide two dimensional electron gasses by observing a surface gated quantum Hall effect in an InAs-AlSb heterostructure. Gating is made possible by growing an aluminum oxide layer on top of the device. We find the depletion point can be changed by applying a large positive gate voltage, and we see hysteresis below depletion. Supported by ARO W911NF-05-1-0062, NSEC PHY-0117795, NSF DMR-0353209 and DMR-0213282.

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Authors

  • Ian Gelfand

    • Harvard University

  • Sami Amasha

  • Dominik Zumbuhl

    • MIT and Harvard University

  • Marc Kastner

    • Massachusetts Institute of Technology
    • MIT

  • Christoph Kadow

  • Arthur Gossard

    • University of California at Santa Barbara