Origin of hysteresis in gate-modulated transport in single-wall carbon nanotubes

ORAL

Abstract

Transfer characteristics of gate-modulated transport in single-wall carbon nanotubes show significant hysteresis. This hysteresis is usually attributed to a screening of the gate voltage due to mobile charges/ions in the presence of a trapping/de-trapping mechanism within the gate architecture. From a temperature dependence of the hysteresis behavior, we suggest an alternate mechanism, where the screening charges are injected from the nanotube itself into the surrounding dielectric. Any trapping/de-trapping mechanism does not appear to play a significant role, and the experimental results can be understood in terms of a capacitive charging of the surrounding dielectric.

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Authors

  • Swastik Kar

    • Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York
    • Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York

  • A. Vijayaraghavan

    • Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York

  • S. Talapatra

    • Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy New York
    • Rensselaer Nanotechnology Center and Department of MS\&E, Rensselaer Polytechnic Institute, Troy NY.

  • Caterina Soldano

    • Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy New York
    • Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York

  • Saroj Nayak

    • Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy New York
    • Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York

  • Omkaram Nalamasu

  • Pulickel M. Ajayan

    • Rensselaer Polytechnic Institute
    • Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York
    • Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York